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| Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A Unit: mm (0.425) +0.1 0.30.0 +0.10 0.150.05 s Features q q 3 (0.65) (0.65) 1.30.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings -45 -45 -7 -200 -100 150 150 -55 ~ +150 Unit V V V mA mA mW C C 10u 2.00.2 1:Base 2:Emitter 3:Collector 0 to 0.1 0.90.1 0.90.1 +0.2 EIAJ:SC-70 SMini3-G1 Package Marking symbol : B s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob * Conditions VCB = -20V, IE = 0 VCE = -10V, IB = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -2mA IC = -100mA, IB = -10mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz min typ max -0.1 -100 Unit A A V V V -45 -45 -7 160 - 0.3 80 2.7 460 - 0.5 VCE(sat) V MHz pF *h FE Rank classification Rank hFE Marking Symbol Q 160 ~ 260 BQ R 210 ~ 340 BR S 290 ~ 460 BS 232 0.20.1 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.250.10 2.10.1 5u 1 2 Transistor PC -- Ta 240 -120 Ta=25C 200 -100 -50 2SB1218A IC -- VCE -60 VCE=-5V Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 160 -80 IB=-300A -60 -250A -200A -40 -150A -100A -20 -50A Collector current IC (mA) -40 120 -30 80 -20 40 -10 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 0 -150 -300 -450 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IB -- VBE -400 VCE=-5V Ta=25C -350 -200 -240 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) -10 -3 -1 VCE=-5V 25C Ta=75C -25C VCE(sat) -- IC IC/IB=10 Base current IB (A) -300 -250 -200 -150 -100 -50 0 0 - 0.6 -1.2 -1.8 Collector current IC (mA) -160 - 0.3 25C - 0.1 Ta=75C -120 -25C -80 - 0.03 - 0.01 -40 - 0.003 - 0.001 -1 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 -3 -10 -30 -100 -300 -1000 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 600 VCE=-10V 160 140 120 100 80 60 40 20 0 -1 0 0.1 VCB=-10V Ta=25C fT -- I E 8 Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 7 6 5 4 3 2 1 0 -1 400 Ta=75C 300 25C -25C 200 100 -3 -10 -30 -100 -300 -1000 0.3 1 3 10 30 100 -3 -10 -30 -100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 233 Transistor NF -- IE 6 VCB=-5V f=1kHz Rg=2k Ta=25C 20 18 16 VCB=-5V Rg=50k Ta=25C 2SB1218A NF -- IE 300 hfe 100 h Parameter -- IE 5 Noise figure NF (dB) Noise figure NF (dB) 12 10 8 6 4 2 h Parameter 4 14 f=100Hz 1kHz 30 hoe (S) 3 10 2 10kHz hie (k) 3 VCE=-5V f=270Hz Ta=25C 3 10 1 0 0.01 0.03 0.1 0.3 1 3 10 0 0.1 0.3 1 3 10 1 0.1 hre 0.3 (10-4) 1 Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA) h Parameter -- VCE 300 hfe 100 IE=2mA f=270Hz Ta=25C h Parameter 30 hoe (S) 10 3 hre (10-4) hie (k) 1 -1 -3 -10 -30 -100 Collector to emitter voltage VCE (V) 234 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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